• 3D Integration technology: Status and application development 

      Ramm, Peter; Klumpp, Armin; Weber, Josef; Lietaer, Nicolas; Taklo, Maaike M. Visser; de Raedt, W.; Fritzsch, Thomas; Couderc, Pascal (Journal article; Peer reviewed, 2010)
      As predicted by the ITRS roadmap, semiconductor industry development dominated by shrinking transistor gate dimensions alone will not be able to overcome the performance and cost problems of future IC fabrication. Today ...
    • High aspect ratio deep RIE for novel 3D radiation sensors in high energy physics applications 

      Kok, Angela; Hansen, Thor-Erik; Hansen, Trond Andreas; Jensen, Geir Uri; Lietaer, Nicolas; Mielnik, Michal Marek; Storås, Preben (Journal article; Peer reviewed, 2009)
      3D detectors with electrodes penetrating through the entire silicon substrate have many advantages over conventional planar silicon technology, for example, high radiation tolerance. High aspect ratio through-wafer holes ...
    • Technologies enabling 3D stacking of MEMS 

      Taklo, Maaike Margrete Visser; Mielnik, Michal Marek; Schjølberg-Henriksen, Kari; Storås, Preben; Tofteberg, Hannah Rosquist; Lietaer, Nicolas; Johannessen, Rolf (Chapter, 2010)
      In order to realize reliable 3D stacking of micro electromechanical systems (MEMS), interconnection and through wafer via technologies have been adapted from other areas and verified ...